1 schottky barrier diodes (sbd) publication date: october 2003 skh00133aed MA6J784 silicon epitaxial planar type for super high speed switching for small current rectification features ? i f(av) = 100 ma rectification is possible ? optimum for high frequency rectification because of its short reverse recovery time (t rr ) ? low forward voltage v f and good rectification efficiency absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit forward voltage v f i f = 100 ma 0.55 v reverse current i r v r = 30 v 15 a terminal capacitance c t v r = 0 v, f = 1 mhz 20 pf reverse recovery time * t rr i f = i r = 100 ma 2.0 ns i rr = 0.1 ? i r , r l = 100 ? electrical characteristics t a = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. this product is sensitive to electric shock (static electricity, etc.). due attention must be paid on the charge of a human b ody and the leakage of current from the operating equipment. 3. rated input/output frequency: 250 mhz 4. * : t rr measuring instrument unit: mm bias application unit n-50bu 90% pulse generator (pg-10n) r s = 50 ? wave form analyzer (sas-8130) r i = 50 ? t p = 2 s t r = 0.35 ns = 0.05 i f = 100 ma i r = 100 ma r l = 100 ? 10% input pulse output pulse i rr = 0.1 ? i r t r t p t rr v r i f t t a marking symbol: m8a parameter symbol rating unit reverse voltage v r 30 v repetitive peak reverse voltage v rrm 30 v average forward current * 2 i f(av) 100 ma peak forward current * 2 i fm 300 ma non-repetitive peak forward i fsm 1a surge current * 1, 2 junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c note) * 1: the peak-to-peak value in one cycle of 50 hz sine wave (non-repetitive) * 2: value of each diode in double diodes used. 1: anode 1 4: cathode 3 2: anode 2 5: cathode 2 3: anode 3 6: cathode 1 eiaj: sc-88 smini6-f1 package internal connection 123 654 (0.65)(0.65) 2.0 0.1 0.7 0.1 1.25 0.1 2.1 0.1 0.16 +0.10 ?0.06 123 654 0.2 0.05 (0.425) 5? (0.15) 5? 0 to 0.1
m6j784 2 skh00133aed 10 ? 2 0 0.1 0.2 0.3 0.4 0.5 0.6 10 ? 1 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a = 125 c ? 20 c 75 c 25 c i f ? v f i r ? v r v f ? t a i r ? t a c t ? v r 10 ? 1 0 5 10 15 20 25 30 1 10 10 2 10 3 10 4 reverse voltage v r ( v ) reverse current i r ( a ) t a = 125 c 75 c 25 c 0 0.2 0.4 0.6 0.8 1.0 ? 40 0 40 80 120 160 200 ambient temperature t a ( c ) forward voltage v f ( v ) i f = 100 ma 10 ma 3 ma 10 ? 1 ? 40 0 40 80 120 160 200 1 10 10 2 10 3 10 4 ambient temperature t a ( c ) reverse current i r ( a ) v r = 30 v 3 v 1 v 0 24 20 16 12 8 4 0 5 10 15 20 25 30 reverse voltage v r ( v ) terminal capacitance c t ( pf ) f = 1 mhz t a = 25 c
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep
|
